SVT ASSOCIATES INC

SUPERLATTICE LONG-WAVE INFRARED DETECTOR

INTEGRATED PRODUCTION OF ULTRA-LOW DEFECT GAN FILMS AND DEVICES FOR HIGH-POWER AMPLIFIERS HIGH QUALITY GAN EPITAXIAL FILMS ARE ONE OF THE KEYS TO CURRENT EFFORTS FOR DEVELOPMENT OF BOTH HIGH-POWER/HIGH-SPEED ELECTRONIC DEVICES AND OPTOELECTRONIC DEVICES. IN FACT, SOLID STATE LIGHTING, HIGH-TEMPERATURE AND HIGH-POWER ELECTRONICS, MICROELECTRONIC AND MECHANICAL SENSORS, AND HIGH-EFFICIENCY SOLAR CELLS ARE ALL POISED AT A NEW LEVEL OF DEVELOPMENT. THIS ENORMOUS MARKET IS WAITING FOR LOW-COST, HIGH QUALITY SUBSTRATES TO ACHIEVE PERFORMANCE AND FABRICATION ECONOMIES OF SCALE. AFTER ACHIEVING DISLOCATION DENSITIES BELOW 1E7 CM-2 IN THE PHASE I WORK, THIS NASA SBIR PHASE II PROJECT ADDRESSES THE DEVELOPMENT OF A DISLOCATION FILTER THAT CAN ROUTINELY PREPARE LOW-STRESS GAN THIN FILMS WITH THREADING DISLOCATION DENSITIES BELOW 1E6 CM-2. THE METHOD RELIES ON USING A LOW-ANGLE ION BEAM TO INDUCE BOTH NANOFILTER FOR DEFECT REDUCTIONS AND TO INHIBIT DROPLET FORMATION AT LOW GROWTH TEMPERATURES. DISLOCATION DENSITIES HAVE SO FAR BEEN DETERMINED BY STANDARD ETCH PIT DENSITIES METHOD. THE GOAL THE PROJECT TO OPTIMIZE THE MULTIPLE DEFECT NANOFILTER WITH SMOOTHENING BY TRANSITION LAYERS IN BETWEEN FILTERS TO REDUCE THE TD TO LESS THAN 1E6 CM-2 AND PROCESS, FABRICATE HIGH PERFORMANCE HEMT FOR SOLID STATE HIGH POWER AMPLIFIER (SSPA) APPLICATIONS. TO OBTAIN A MORE PRACTICAL EVALUATION OF THE EFFECTIVENESS AND COMMERCIAL VIABILITY OF THE METHOD, HETEROJUNCTION FIELD EFFECT TRANSISTORS WITH HIGH ELECTRON MOBILITY WILL BE FABRICATED IN THESE ULTRA-LOW DEFECT DENSITY FILMS. THESE HIGH-QUALITY MATERIAL BASED HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS) WILL ENABLE HIGH LINEARITY POWER AMPLIFIERS WITH EXCELLENT THERMAL STABILITY AND FREQUENCY RESPONSE. THE PROPOSED METHOD TO GROW ON LOW-STRESS, LOW-DISLOCATION DENSITY FILMS WILL LEAD TO THE PRODUCTION OF ELECTRONIC DEVICES OF UNPARALLELED PERFORMANCE.

PR 4200228087 SBIR PHASE II -- HIGH PERFORMANCE DUAL BAND PHOTODETECTOR ARRAYS FOR MID-WAVELENGTH INFRARED (MWIR), LONG-WAVELENGTH INFRARED (LWIR) IMAGING. DEVELOP MATERIAL GROWTH AND DEVICE PROCESSING TECHNIQUES TO FABRICATE DUAL-BAND MID-WAVELENGTH INFRARED (MWIR) / LONG-WAVELENGTH INFRARED (LWIR) PHOTODETECTOR FOCAL PLANE TWO-DIMENSIONAL (2D) ARRAYS. THE ACTIVE STRUCTURE IS BASED ON INAS/GA(IN)SB TYPE-II SUPERLATTICES. OF PARAMOUNT INTEREST IS THE ABILITY TO TUNE THIS MATERIAL TO MWIR AND LWIR WAVELENGTHS BASED ON THE SUPERLATTICE PAIR THICKNESS. THE CONTRACTOR SHALL PERFORM SPECIFIC TASKS, AS FOLLOWS: UTILIZE ENERGY-BAND STRUCTURE MODELING TO STUDY THE DESIGN OF THE DUAL-BAND TYPE-II INAS/(IN)GASB SUPERLATTICE PHOTO DETECTORS THAT REQUIRE EXCELLENT CONTROL OF MBE GROWTH AND UNIQUE DEVICE FABRICATION TECHNIQUES. TUNE THE GROWTH PROCEDURE BASED ON BOTH THIN-FILM CHARACTERIZATION AND ELECTRICAL AND OPTICAL MEASUREMENTS. EMPLOY X-RAY DIFFRACTION (XRD), ATOMIC FORCE MICROSCOPE (AFM), HALL, SCAN ELECTRON MICROSCOPE (SEM), TRANSMISSION ELECTRON MICROSCOPE (TEM) TO CHARACTERIZE THE MOLECULAR BEAM EPITAXY (MBE) GROWN MATERIALS. THESE MEASUREMENTS AS WELL AS THE RESULTS FROM PHOTODETECTOR CHARACTERIZATION WILL BE USED TO FURTHER IMPROVE THE PHOTODETECTOR DESIGNS AND MATERIAL GROWTH. USE ATOMIC HYDROGEN TO DESORB SURFACE NATIVE OXIDE ON MESA-ETCHED PHOTO DETECTOR STRUCTURES AT LOW TEMPERATURES. STUDY MBE REGROWTH FOR SURFACE/SIDEWALL PASSIVATION. ENCAPSULATE THE PHOTO DETECTOR DEVICES TO HELP ACHIEVE LONG TERM DEVICE STABILITY. INTEGRATE OUR CURRENT ATOMIC LAYER DEPOSITION (ALD) SYSTEM WITH THE MBE SYSTEM TO CARRY OUT ALD ENCAPSULATION WITHOUT EXPOSING THE REGROWTH SAMPLE TO AIR. BASED ON FEEDBACK FROM THE DEVICE PROCESSING AND PASSIVATION TESTS, DEVELOP A STRATEGY TO CREATE THE DUAL-BAND DETECTOR STRUCTURE. THIS INCLUDES PRODUCING A NEW PHOTO MASK SET WHICH TAKES INTO ACCOUNT THE PIXEL ETCHING AND PASSIVATION LAYER STEPS. THE PHOTODETECTOR WILL BE THEN CHARACTERIZED IN TERMS OF CURRENT-VOLTAGE (I-V) MEASUREMENT, PHOTO RESPONSE TESTING, TEMPERATURE CHARACTERISTICS, AND UNIFORMITY EVALUATION. FABRICATE LINEAR DUAL-BAND ARRAYS WILL BE FABRICATED IN-HOUSE. THE ULTIMATE GOAL WILL BE TO SUPPORT DEVELOPMENT OF MWIR/LWIR FOCAL PLANE ARRAYS THAT COMBINES THE ATTRIBUTES OF LARGE PIXEL FORMAT (128 X 128, HIGH DETECTIVITY) AND LOW NOISE OVER A WIDE-RANGE OF 3-15 UM. EVALUATE DIFFERENT COMMERCIALIZATION OPTIONS INCLUDING INDUSTRIAL PARTNERSHIP AND A POSSIBLE SPIN OFF.

IGF::OT::IGF SVT ASSOCIATES PROPOSES AN NOVEL TYPE II SUPERLATTICE STRUCTURE TO EXTEND THE CUTOFF WAVELENGTH AND CBIRD SL PHOTO DIODE STRUCTURE WITH UNIPOLAR BARRIERS TO SUPPRESS DARK CURRENT OF SL DETECTORS GROWN ON GASB SUBSTRATE. THIS INAS/GASB SUPERLATTICE MATERIAL SYSTEM IS CAPABLE OF INFRARED DETECTION IN MWIR/LWIR SPECTRAL RANGE, DEPENDING ON LAYER THICKNESS OF EACH SUPERLATTICE PERIOD. THE GOAL OF THIS PROGRAM IS TO DEVELOP HIGH PERFORMANCE TYPE II SL BASED FPA FOR 5-14 UM DETECTION. PHOTODETECTOR ARRAYS USING THIS MATERIAL ARE OF GREAT INTEREST TO THE NASA FOR VARIOUS APPLICATIONS INCLUDING, IN PARTICULAR, IMAGING AND OPTICAL DETECTION, AND OBJECT DISCRIMINATION WHEN TRACKING TARGETS IN SPACE OR PERFORMING ASTRONOMICAL OBSERVATIONS. THESE LWIR PHOTO DETECTORS CAN ALSO FIND APPLICATION TO INFRARED-BASED CHEMICAL IDENTIFICATION SYSTEMS AND TERRESTRIAL MAPPING. APPLYING THE DARK CURRENT SUPPRESSION AND CUTOFF WAVELENGTH EXTENSION PROCESS TO THE TYPE-II SUPERLATTICE DETECTORS SHOULD RESULT IN HIGHER OPERATING TEMPERATURE, EXTENDED CUTOFF WAVELENGTH, AND IMPROVED QUANTUM EFFICIENCY, ALL IMPORTANT FACTORS THAT SHOULD SIGNIFICANTLY ENHANCE FPA OPERATION. WE INTEND TO CHARACTERIZE THE POSITIVE EFFECTS OF PROPOSED TECHNIQUES IN PHASE I. IN PHASE II WE WILL REFINE THE TECHNIQUES TO REALIZE PASSIVE-COOLED HIGH-PERFORMANCE LWIR FPAS WITH QUANTUM EFFICIENCY LARGER THAN 60%.

SVT ASSOCIATES PROPOSES AN NOVEL TYPE II SUPERLATTICE STRUCTURE TO EXTEND THE CUTOFF WAVELENGTH AND CBIRD SL PHOTO DIODE STRUCTURE WITH UNIPOLAR BARRIERS TO SUPPRESS DARK CURRENT OF SL DETECTORS GROWN ON GASB SUBSTRATE. THIS INAS/GASB SUPERLATTICE MATERIAL SYSTEM IS CAPABLE OF INFRARED DETECTION IN MWIR/LWIR SPECTRAL RANGE, DEPENDING ON LAYER THICKNESS OF EACH SUPERLATTICE PERIOD. THE GOAL OF THIS PROGRAM IS TO DEVELOP HIGH PERFORMANCE TYPE II SL BASED FPA FOR 6-14 UM DETECTION. PHOTO DETECTOR ARRAYS USING THIS MATERIAL ARE OF GREAT INTEREST TO THE NASA FOR VARIOUS APPLICATIONS INCLUDING, IN PARTICULAR, IMAGING AND OPTICAL DETECTION, AND OBJECT DISCRIMINATION WHEN TRACKING TARGETS IN SPACE OR PERFORMING ASTRONOMICAL OBSERVATIONS. THESE LWIR PHOTO DETECTORS CAN ALSO FIND APPLICATION TO INFRARED-BASED CHEMICAL IDENTIFICATION SYSTEMS AND TERRESTRIAL MAPPING. APPLYING THE DARK CURRENT SUPPRESSION AND CUTOFF WAVELENGTH EXTENSION PROCESS TO THE TYPE II SUPERLATTICE DETECTORS SHOULD RESULT IN HIGHER OPERATING TEMPERATURE, EXTENDED CUTOFF WAVELENGTH, AND IMPROVED QUANTUM EFFICIENCY, ALL IMPORTANT FACTORS THAT SHOULD SIGNIFICANTLY ENHANCE FPA OPERATION. WE INTEND TO CHARACTERIZE THE POSITIVE EFFECTS OF PROPOSED TECHNIQUES IN PHASE I. IN PHASE II WE WILL REFINE THE TECHNIQUES TO REALIZE PASSIVE-COOLED HIGH-PERFORMANCE LWIR FPAS WITH QUANTUM EFFICIENCY LARGER THAN 50%.

INTEGRATED PRODUCTION OF ULTRA-LOW DEFECT GAN FILMS AND DEVICES FOR HIGH-POWER AMPLIFIERS

IN THIS SBIR PHASE I PROGRAM, WE PROPOSE TO FABRICATE HIGH-EFFICIENCY AND RADIATION HARD SOLAR CELLS BASED ON INGAN MATERIAL SYSTEM THAT CAN COVER THE WHOLE SOLAR SPECTRUM BY ADJUSTING THE ALLOY COMPOSITION. THE MAIN PROGRAM OBJECTIVES INCLUDE THE FABRICATION OF INGAN-BASED SOLAR CELLS ON LARGE DIAMETER SUBSTRATES, WITH EXTERNAL EFFICIENCY IN EXCESS OF 35%, AND CAPABLE OF LONG LIFE OPERATION IN HIGH RADIATION ENVIRONMENT OF SPACE AT ELEVATED TEMPERATURES.

GAN-BASED, LOW-VOLTAGE AVALANCHE PHOTODIODES FOR ROBUST AND COMPACT UV IMAGERS THIS PHASE I SBIR PROGRAM IS DIRECTED TOWARD THE DEVELOPMENT OF A NOVEL LOW-VOLTAGE (~10V) ALGAN-BASED MULTI-QUANTUM WELL (MQW) AVALANCHE PHOTODIODE (APD) ON LOW-COST SUBSTRATES. THE HIGH-GAIN, HIGH-SPEED AND LOW-NOISE OPERATION OF THE PROPOSED DEVICE ALLOW THE REPLACEMENT OF BULKIER AND MORE FRAGILE PHOTOMULTIPLIER TUBES (PMTS) FOR MANY UV PHOTON-COUNTING AND IMAGING APPLICATIONS. IN PARTICULAR, REDUCTION IN SIZE AND WEIGHT IN ADDITION TO IMPROVEMENTS IN RELIABILITY AND RUGGEDNESS COMPARED TO PMTS, MAKE THIS TECHNOLOGY VERY SUITABLE FOR SOME OF THE NASA'S PLANNED SPACE MISSIONS AS WELL AS OTHER CIVILIAN AND DEFENSE APPLICATIONS THAT REQUIRE HIGH-SENSITIVITY, SOLAR-BLIND UV DETECTION.

THIS PROPOSAL IS DIRECTED TOWARD THE DEVELOPMENT OF INNOVATIVE HIGH-EFFICIENCY UV PHOTOCATHODES BASED ON THE WIDE BANDGAP III-NITRIDE SEMICONDUCTORS FOR RELIABLE OPERATION AT HIGH TEMPERATURE AND HIGH RADIATION ENVIRONMENTS FOR FUTURE NASA MISSIONS NEAR THE SUN AND IN DEEP ATMOSPHERES OF VENUS AND JUPITER. THE PROPOSED WORK INCLUDES THE INCORPORATION OF THESE PHOTOCATHODES ON AL2O3-BASED HIGH-TEMPERATURE MICRO-CHANNEL PLATES (MCPS) FOR HIGH-SENSITIVITY UV PHOTON COUNTING AND IMAGING

ADVANCED COATING TECHNOLOGY FOR ENHANCED PERFORMANCE OF MICROCHANNEL PLATES FOR UV DETECTORS

SVT ASSOCIATES PROPOSES AN INNOVATIVE DIGITAL ALLOY TECHNIQUE TO EXTEND THE CUTOFF WAVELENGTH OF INASSB BEYOND 5 UM, A WIDER BAND GAP INALASSB LAYER INSERTED INTO DEPLETION REGION TO SUPPRESS DARK CURRENT, AND ATOMIC LAYER DEPOSITION TECHNIQUE TO COAT RADIATION-HARD MATERIAL ALN ON INASSB DETECTORS GROWN ON GASB SUBSTRATE. THIS DIGITAL ALLOY INASSB MATERIAL SYSTEM IS CAPABLE OF INFRARED DETECTION BETWEEN 0.4-5 UM, DEPENDING ON LAYER THICKNESS OF THE PERIOD OF EACH DIGITAL ULTRA THIN SUPERLATTICE. THE GOAL OF THIS PROGRAM IS TO DEVELOP INASSB-BASED FPA FOR 0.4-5 UM DETECTION AT ROOM TEMPERATURE. PHOTO DETECTOR ARRAYS USING THIS MATERIAL ARE OF GREAT INTEREST TO THE NASA FOR VARIOUS APPLICATIONS INCLUDING, IN PARTICULAR, IMAGING AND OPTICAL DETECTION, AND OBJECT DISCRIMINATION WHEN TRACKING TARGETS IN SPACE OR PERFORMING ASTRONOMICAL OBSERVATIONS. THESE MWIR PHOTO DETECTORS CAN ALSO FIND APPLICATION TO INFRARED-BASED CHEMICAL IDENTIFICATION SYSTEMS AND TERRESTRIAL MAPPING. APPLYING THE DARK CURRENT SUPPRESSION AND CUTOFF WAVELENGTH EXTENSION PROCESS TO THE INASSB-BASED DETECTORS SHOULD RESULT IN HIGHER OPERATING TEMPERATURE, EXTENDED CUTOFF WAVELENGTH, AND RADIATION-HARD DEVICES, ALL IMPORTANT FACTORS THAT SHOULD SIGNIFICANTLY ENHANCE FPA OPERATION. WE INTEND TO CHARACTERIZE THE POSITIVE EFFECTS OF PROPOSED TECHNIQUES IN PHASE I. IN PHASE II WE WILL REFINE THE TECHNIQUES TO REALIZE HIGH-PERFORMANCE MWIR FPAS OPERATING AT AMBIENT TEMPERATURES.

SBIR PH I ACTION

RECENTLY, RESONANT-TUNNELING-DIODE (RTD) BASED CIRCUITS EMPLOYING MONOLITHICALLY-INTEGRATED RTD ON HIGH ELECTRON MOBILITY (HEMT) STRUCTURES HAVE BEEN DEVELOPED IN A NUMBER OF III-V SYSTEMS IN ORDER TO IMPROVE OPERATIONAL SPEED. THE MAIN GOAL OF THIS PROGRAM IS TO DEVELOP WIDE TEMPERATURE-OPERABLE RADIATION HARD MONOLITHICALLY-INTEGRATED ELECTRONICS BASED ON WIDE BANDGAP III-NITRIDE EPITAXIAL STRUCTURES. IN THE PHASE I PROGRAM, WE PROPOSE TO DEVELOP SAME-WAFER DISCRETE DEVICES (CAPACITORS, HEMTS, AND RTDS) BY EMPLOYING A NOVEL MULTI-LAYER ALN/GAN HETEROSTRUCTURE DESIGN, AND TO DEMONSTRATE THE RADIATION HARDNESS OF THESE DEVICES.

ATOMIC FLUX MONITOR

MOLECULAR BEAM EPITAY SYSTEMS PR# 63-9080-19

IGF::OT::IGF STATUS REPORT

ARL REQUIRES ONE (1) MOLECULAR BEAM EPITAXY (MBE) COMPATIBLE ION BEAM SOURCE REQUIRED FOR GROWTH OF CUBIC BORON NITRIDE.

STAGE/MANIPULATOR

MODEL SVTA-DFLT-100

TWO EFFUSION CELL SYSTEM FOR MULTI GROWTH CHAMBER

HIGH TEMP EFFUSION CELL MODEL:

SAP PURCHASE REQUISITION: 4200247421. UHV BEAM EVAPORATION OF ELEMENTAL HALFNIUM. SHALL BE FULLY EQUIVALENT TO THE SVT-EBSH-4.5-C FROM SVT ASSOCIATES WITH THE FOLLOWING ADDITIONAL REQUIREMENTS: 1. ASSEMBLY SHALL BE COMPLETELY COMPATIBLE WITH EXISTING GOVERNMENT OWNED CREATEC-BRAND-MBE (MELCULAR BEAM EPITAXIAL) SYSTEM OR EQUIVALENT AND MOUNTED ON A STANDARD OD 4.5" CF TYPE UHV (ULTRA HIGH VACUUM) STAINLESS STEEL FLANGE. A. COMPLETE SYSTEM SHALL BE CERTIFIED HELIUM-LEAK TESTED IN ULTRA GIGH VACUUM TO LESS THAN 1E-10 MILLIBAR-LITER PER SECOND. B. SHALL HAVE AN IN-VACUUM LENGTH OF AT LEAST 257 MILLIMETERS AND LESS THAN 260 MILLIMETERS, MEASURED FROM THE CELL FLANGE FACE TO THE FURTHEST PART ON THE CELL. 2. CHALL ACCOMODATE HALFNIUM "SHOT" IN A HEARTH STYLE WITH COMPATIBLE CRUCIBLE TO AACOMODATE AT LEAST 2 CUBIC CENTIMETERS IN VOLUME OF HALFNIUM "SHOT." A. HEARTH SHALL BE ANGLED AS SPECIFIED BY END USER AT TIME OF MANUFACTURE. B. HEARTH-LINER SHALL BE OF COMPATIBLE MATERIAL FOR HALFNIUM, SUCH AS GRAPHITE. 3. SHALL BE CAPABLE OF SOURCE-HEATING WITHIN THE TEMPERATURE RANGE OF 150 DEGREES CELSIUS TO AT LEAST 3000 DEGREES CELSIUS. 4. SHALL INCLUDE WATER COOLING TO THE HEARTH ASSEMBLY USING A MATERIAL EQUAL TO OR GREATER THAN THAT OF A COPPER HEAT SINK ASSEMBLY. 5. SHALL INCLUDE PROVISION TO PURCHASE OPTIONAL CRUCIBLE LINERS FROM OEM. 6. SHALL IMPLEMENT AN APPROXIMATE FULL CIRCLE FILAMENT AROUND THE TOP OF THE HEARTH TO ELIMINATE "HOT SPOTS" ON THE HALFNIUM SHOT. A. WITH THE FILAMENT GUARANTEED TO BE "OUT OF THE LINE-OF-SIGHT" TO EFFECTIVELY PROVIDE MAINTENANCE-FREE CHANGE OF CRUCIBLE-LINERS CONTAINING A SOURCE MATERIAL DIFFERENT THAN HALFNIUM. B. DEPOSITION RATES CONTROLLABLE AND PROVIDE EQUAL TO OR GREATER THAN DEPOSITION RATES OF 0.2 NANOMETERS PER MINUTE AT A TARGET DISTANCE OF 100 MILLIMETERS USING A HALFNIUM SOURCE TEMPERATURE OF APPROXIMATELY 3100 DEGREE CELSIUS. 7. SHALL INCLUDE AN INTEGRATED BEAM FLUX MONITOR WITH: A. INTEGRATED COMMUNICATION INTERFACE. B. FEEDBACK CONTROLLER WITH ALL CABLES. C. HARDWIRED INTERLOCK TO COOLING-WATER FLOW. D. MODIFIED FOR ELECTRON BEAM SOURCE WITH COLLECTION GRID. 8. SHALL INCLUDE ALL CABLES AND A POWER SUPPLY WITH THE FOLLOWING MINIMUM CAPABILITIES: A. ELECTRICAL: MINIMUM OF 3000 WATTS TOTAL POWER OUTPUT. B. POWER CABLES TO SURVIVE TO A MINIMUM TEMPERATURE OF 200 DEGREES CELSIUS. C. CONTROLS: MANUAL CONTROL OF SETTINGS BY USER INCLUDING FRONT PANEL CONTROL OF AT LEAST THE EMISSION CURRENT, HIGH VOLTAGE BIAS AND FILAMENT CURRENT. 9. SHALL INCLUDE CLOSED LOOP CONTROL VIA THE INTEGRATED FLUX MONITOR WITH THE POWER SUPPLY. 10. SHALL INCLUDE INSTALLATION HARDWARE FOR A 19-INCH RACK MOUNTING OF 6U OR LESS. 11. SHALL BE WIRED FOR 220VAC, SINGLE PHASE, 60HZ POWERLINE OPERATION. 12. SHALL INCLUDE ALL INSTALLATION, ON-SITE HALFNIUM-SOURCE DEMONSTRATION/DEPOSITION OF REQUIRED PERFORMANCE, AND TRAINING AND DOCUMENTATION.

THE PURPOSE OF THIS REQUIREMENT IS FOR A EFFUSION CELL SYSTEM WITH DUAL FILAMENT HEATING ELEMENTS TO BE USED IN THE CALCIUM RAMSEY-BORDE CALCIUM ATOM INTERFEROMETER RESEARCH AT NIST-BOULDER.

CELL, DUAL FILAMENT EFFUSION.

CRUCIBLE, 40CC DOUBLE WALLED STRAIGHT WA

RF PLASMA SOURCE FOR VEECO GEN10 MBE SYSTEM

DUAL FILAMENT EFFUSIVE CELL

EFFUSION CELL

DUAL FILAMENT EFFUSION CELL

ITEM MODEL NUMBER: DD-6-450, PNEUMATIC SHUTTER UPGRADE, MODEL 6CC: 6CC STRAIGHT WALL PBN, SVTA-EC-C25: CABLE SET FOR EFFUSION CELL

DUAL FILAMENT EFFUSION CELL

IGF::OT::IGF DUAL FILAMENT EFFUSION CELL

P TYPE GAN WAFER

MODEL SVTA-DFLT-100

OU68-25-NEW-249 ALUMINUM EFFUSION CELL

HIGH TEMPERATURE EFFUSION CELL

IGF::OT::IGF EFFUSION CELL

THIS ALUMINUM EFFUSION CELL AND CONICAL CRUCIBLE IS A REPLACEMENT FOR THE NIST OWNED VEECO GEN 10 MOLECULAR BEAM EPITAXY SYSTEM.

LOW TEMPERATURE EFFUSION CELL, 22CC CRUCIBLES: A1203 AND PBN, POWER SUPPLY AND CONTROL PACKAGE. QTY., 1 EACH. SHIPPING AND HANDLING.

MODULATION P-DOPED GAN PHOTCATHODE, QTY., 2 EACH. SHIPPING.

SBIR PHASE II RESEARCH AND DEVELOPMENT

PHASE II SCIENTIFIC RESEARCH

SBIR PHASE II RESEARCH AND DEVELOPMENT

200605!600113!2100!W911NF!USA MATERIEL COMMAND ACQUISITION!W911NF06C0015 !A!N! !N! ! !20051112!20061106!876868647!876868647!876868647!N!SVT ASSOCIATES, INCORPORATED !7620 EXECUTIVE DR !EDEN PRAIRIE !MN!55344!18116!053!27!EDEN PRAIRIE !HENNEPIN !MINNESOTA !+000000364844!N!N!000000364844!AZ11!RDTE/OTHER RESEARCH & DEVELOPMENT-BASIC RESEARCH !S1 !SERVICES !000 !NOT DISCERNABLE !541710!E! !3! ! ! ! ! !99990909!B! ! !A! !A!U!U!2!099!K! !Z!N!Z! ! !N!B!N!N! ! !A! !B!A!000!C!B!N! ! ! ! ! ! !0001! !

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SBIR PHASE II, TOPIC #:A04-048